Abstract
In this paper, we first introduce the RF performance of Globalfoundries 45RFSOI process. NFET F t > 290GHz and F max >380GHz. Then we present several mm-Wave circuit block designs, i.e., Switch, Power Amplifier, and LNA, based on 45RFSOI process for 5G Front End Module (FEM) applications. For the SPDT switch, insertion loss (IL) <; 1dB at 30GHz with 32dBm P1dB and > 25dBm P max . For the PA, with a 2.9V power supply, the PA achieves 13.1dB power gain and a saturated output power (P sat ) of 16.2dBm with maximum power-added efficiency (PAE) of 41.5% at 24Ghz continuous-wave (CW). With 960Mb/s 64QAM signal, 22.5% average PAE, -29.6dB EVM, and -30.5dBc ACLR are achieved with 9.5dBm average output power. Show more
Publication status
publishedExternal links
Book title
2017 IEEE 12th International Conference on ASIC (ASICON)Pages / Article No.
Publisher
IEEEEvent
Organisational unit
09757 - Wang, Hua / Wang, Hua
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ETH Bibliography
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