Broadband, Linear, and High-Efficiency Mm-Wave PAs in Silicon Overcoming Device Limitations by Architecture/Circuit Innovations
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Date
2019Type
- Conference Paper
ETH Bibliography
no
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Abstract
Mm-Wave 5G links and many emerging mission-critical DoD applications have recently stimulated major research efforts on next-generation mm-Wave power amplifiers (PAs) to deliver nearly "perfect" large-signal performance. Compared to compound semiconductors, silicon often exhibits inferior device-level capabilities on power density, gain, efficiency, linearity, and reliability. On the other hand, silicon technologies offer matured modeling, flexible back-end options, and extensive digital controls, making them a highly versatile and attractive platform for design innovations and system integrations. This paper reviews several recent silicon mm-Wave PAs from multiple research groups, which all leverage architecture/circuit innovations to overcome device limitations and radically advance the state of the art. These design explorations include Doherty/Outphasing active load modulation, continuous-mode operation, broadband harmonic tuning, nonlinearity cancellation, and power-DACs. Show more
Publication status
publishedExternal links
Book title
2019 IEEE MTT-S International Microwave Symposium (IMS)Pages / Article No.
Publisher
IEEEEvent
Subject
5 G mobile communication; Antennas; Millimeter wave circuits; Power amplifiers; Silicon devices; TransmittersOrganisational unit
09757 - Wang, Hua / Wang, Hua
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ETH Bibliography
no
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