Open access
Date
2022-10Type
- Journal Article
Abstract
After decades of continuous scaling, further advancement of complementary metal-oxide-semiconductor (CMOS) technology across the entire spectrum of computing applications is today limited by power dissipation, which scales with the square of the supply voltage. Here, an atomic-scale tin transistor is demonstrated to perform conductive switching between bistable configurations with on/off potentials <= 2.5 mV in magnitude. In addition to the low operation voltage, the channel length of the transistor is determined experimentally and with density-functional theory to be <= 1 nm because the atoms instead of electrons are information carriers in this device. The conductance at on-states of the bistable configurations varies between 1.2 G(0) to 197 G(0) (G(0) = 2e(2) h(-1), e stands for the electron charge and h for Planck's constant). Thus, the device can supply driving current from 1 to approximate to 375 mu A in magnitude for logic circuits with the drain-source dc voltage at decades of millivolts. The switching frequency of the atomic-scale tin transistor has reached 2047 Hz. Furthermore, the on/off potentials in millivolts can reduce the energy consumption in the interconnects of integrated circuits at least by approximate to 400 times. Therefore, the atomic-scale tin transistor has prospects in digital circuits with ultralow-power dissipation and can contribute to the sustainability of modern society. Show more
Permanent link
https://doi.org/10.3929/ethz-b-000556994Publication status
publishedExternal links
Journal / series
Advanced Electronic MaterialsVolume
Pages / Article No.
Publisher
WileySubject
atom-based electronics; beyond complementary metal-oxide-semiconductors; single-atom transistors; sustainability; ultralow-power dissipationOrganisational unit
02635 - Institut für Elektromagnetische Felder / Electromagnetic Fields Laboratory03974 - Leuthold, Juerg / Leuthold, Juerg
03925 - Luisier, Mathieu / Luisier, Mathieu
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