Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate
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Date
2023-04Type
- Journal Article
ETH Bibliography
yes
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Abstract
Lateral p-i-n diodes with small i-region width (less than 5 μm) were fabricated by direct ion implantation into a high-purity semi-insulating silicon carbide (SiC) substrate. The breakdown voltage of the diodes increased with increasing the i-region width and a lateral effective breakdown electric field of 1.7–1.9 MV/cm was obtained. The experimental breakdown voltage well agreed with the technology computer-aided design (TCAD) simulation, indicating that deep levels contributing the semi-insulating property do not seriously deteriorate the breakdown voltage in case of the small i-region width. Show more
Publication status
publishedExternal links
Journal / series
IEEE Transactions on Electron DevicesVolume
Pages / Article No.
Publisher
IEEESubject
Breakdown; ion implantation; p-i-n diode; silicon carbide (SiC)Organisational unit
09480 - Grossner, Ulrike / Grossner, Ulrike
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ETH Bibliography
yes
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