Abstract
This work presents the characterization of minority carrier traps in epitaxial n-type 4HSiC after high fluence neutron irradiation using minority carrier transient spectroscopy (MCTS) in a temperature range of 20 K to 660 K. Three minority carrier trap levels are reported, labelled as X, B and Y, whose activation energies were estimated by Arrhenius analysis and where the B level is assigned to substitutional boron (BSi). The dynamic behaviour of the trap levels was studied by consecutive temperature scans. Show more
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https://doi.org/10.3929/ethz-b-000640705Publication status
publishedExternal links
Journal / series
Defect and diffusion forumVolume
Pages / Article No.
Publisher
Trans TechSubject
Neutron irradiation; Neutron Damage; MCTS; Point Defects; 4H-SiCOrganisational unit
09480 - Grossner, Ulrike / Grossner, Ulrike
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