Molecular beam epitaxy of InAs/Al and InSb heterostructures for hybrid semiconductor/superconductor devices
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Author
Date
2023Type
- Doctoral Thesis
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https://doi.org/10.3929/ethz-b-000660601Publication status
publishedExternal links
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Publisher
ETH ZurichSubject
Molecular beam epitaxial growth; III-V heterojunctions; PROXIMITY EFFECT (CONDENSED MATTER PHYSICS); Quantum Physics; SUPERCONDUCTIVITY (CONDENSED MATTER PHYSICS); Aluminum thin film; Josephson junctions; Quantum Hall effect; Crystal growthOrganisational unit
03833 - Wegscheider, Werner / Wegscheider, Werner
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Is part of: https://doi.org/10.3929/ethz-b-000626567
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ETH Bibliography
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