Search
Results
-
InP/GaAsSb Double Heterojunction Bipolar Transistor Technology with f(MAX)=1.2 THz
(2021)2021 IEEE International Electron Devices Meeting (IEDM)Transistor (DHBT) emitter fin architecture with a record fMAX = 1.2 THz, a simultaneous fT = 475 GHz and BVCEO = 5.4 V. The resulting BVCEO × fMAX = 6.48 THz-V is unparalleled in semiconductor technology. The performance arises because the process allows: i) an optimal choice of baseemitter access distance down to 10 nm, ii) the use of thicker base contact metals, and iii) the minimization of parasitic capacitances and resistances via ...Conference Paper