High performance organic field-effect transistors with ultra-thin HfO2 gate insulator deposited directly onto the organic semiconductor
dc.contributor.author
Ono, Shimpei
dc.contributor.author
Häusermann, Roger
dc.contributor.author
Chiba, Daichi
dc.contributor.author
Shimamura, Kazutoshi
dc.contributor.author
Ono, Teruya
dc.contributor.author
Batlogg, Bertram
dc.date.accessioned
2020-07-01T12:27:56Z
dc.date.available
2017-06-11T04:54:09Z
dc.date.available
2020-07-01T12:27:56Z
dc.date.issued
2014-01-06
dc.identifier.issn
0003-6951
dc.identifier.issn
1077-3118
dc.identifier.other
10.1063/1.4860998
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/80481
dc.language.iso
en
en_US
dc.publisher
American Institute of Physics
en_US
dc.title
High performance organic field-effect transistors with ultra-thin HfO2 gate insulator deposited directly onto the organic semiconductor
en_US
dc.type
Journal Article
dc.date.published
2014-01-10
ethz.journal.title
Applied Physics Letters
ethz.journal.volume
104
en_US
ethz.journal.issue
1
en_US
ethz.journal.abbreviated
Appl. Phys. Lett.
ethz.pages.start
013307
en_US
ethz.size
4 p.
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Melville, NY
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02010 - Departement Physik / Department of Physics::02505 - Laboratorium für Festkörperphysik (LFP) / Laboratory for Solid State Physics (LFP)::03569 - Batlogg, Bertram (emeritus)
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02010 - Departement Physik / Department of Physics::02505 - Laboratorium für Festkörperphysik (LFP) / Laboratory for Solid State Physics (LFP)::03569 - Batlogg, Bertram (emeritus)
ethz.date.deposited
2017-06-11T04:56:25Z
ethz.source
ECIT
ethz.identifier.importid
imp5936519f2569786949
ethz.ecitpid
pub:126347
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2017-07-14T18:48:19Z
ethz.rosetta.lastUpdated
2024-02-02T11:20:00Z
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=High%20performance%20organic%20field-effect%20transistors%20with%20ultra-thin%20HfO2%20gate%20insulator%20deposited%20directly%20onto%20the%20organic%20semiconductor&rft.jtitle=Applied%20Physics%20Letters&rft.date=2014-01-06&rft.volume=104&rft.issue=1&rft.spage=013307&rft.issn=0003-6951&1077-3118&rft.au=Ono,%20Shimpei&H%C3%A4usermann,%20Roger&Chiba,%20Daichi&Shimamura,%20Kazutoshi&Ono,%20Teruya&rft.genre=article&rft_id=info:doi/10.1063/1.4860998&
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