Subthreshold DC-gain enhancement by exploiting small size effects of MOSFETs
dc.contributor.author
Yang, Minhao
dc.contributor.author
Liu, Shih-Chii
dc.contributor.author
Delbrück, Tobias
dc.date.accessioned
2017-06-11T09:18:59Z
dc.date.available
2017-06-11T09:18:59Z
dc.date.issued
2014-05-22
dc.identifier.issn
0013-5194
dc.identifier.issn
1350-911X
dc.identifier.issn
0013-519
dc.identifier.other
10.1049/el.2014.1056
dc.identifier.uri
http://hdl.handle.net/20.500.11850/84929
dc.language.iso
en
dc.publisher
Institution of Engineering and Technology
dc.title
Subthreshold DC-gain enhancement by exploiting small size effects of MOSFETs
dc.type
Journal Article
ethz.journal.title
Electronics Letters
ethz.journal.volume
50
ethz.journal.issue
11
ethz.journal.abbreviated
Electron. Lett.
ethz.pages.start
835
ethz.pages.end
837
ethz.identifier.wos
ethz.identifier.scopus
ethz.identifier.nebis
000046195
ethz.publication.place
Stevenage
ethz.publication.status
published
ethz.leitzahl
03453 - Douglas, Rodney J.
ethz.leitzahl.certified
03453 - Douglas, Rodney J.
ethz.date.deposited
2017-06-11T09:23:05Z
ethz.source
ECIT
ethz.identifier.importid
imp593651f69312c46062
ethz.ecitpid
pub:133883
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-08-02T11:48:03Z
ethz.rosetta.lastUpdated
2024-02-01T21:53:05Z
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true
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