Comparison of junctionless and inversion-mode p-type metal-oxide-semiconductor field-effect transistors in presence of hole-phonon interactions
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Date
2016Type
- Journal Article
ETH Bibliography
yes
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Publication status
publishedExternal links
Journal / series
Journal of Applied PhysicsVolume
Pages / Article No.
Publisher
American Institute of PhysicsOrganisational unit
03925 - Luisier, Mathieu / Luisier, Mathieu
Notes
Published online 29 January 2016.More
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ETH Bibliography
yes
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