High pressure crystal growth, thermodynamics and physical properties of AIxGa₁-xN semiconductors
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Author
Date
2010Type
- Doctoral Thesis
ETH Bibliography
yes
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https://doi.org/10.3929/ethz-a-006039449Publication status
publishedExternal links
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ETHSubject
HALBLEITERMATERIALIEN (ELEKTROTECHNIK); ALUMINIUM-STICKSTOFF-VERBINDUNGEN (ANORGANISCHE CHEMIE); KRISTALLZÜCHTUNG + KRISTALLWACHSTUM; MIKROSTRUKTUR VON MOLEKULARSYSTEMEN (PHYSIK); SEMICONDUCTOR MATERIALS (ELECTRICAL ENGINEERING); ALUMINIUM-NITROGEN COMPOUNDS (INORGANIC CHEMISTRY); CRYSTALL GROWING + CRYSTAL GROWTH; MICROSTRUCTURE OF MOLECULAR SYSTEMS (PHYSICS)Organisational unit
03569 - Batlogg, Bertram (emeritus)
Notes
Diss., Eidgenössische Technische Hochschule ETH Zürich, Nr. 18846, 2010.More
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ETH Bibliography
yes
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