Current Spreading Efficiency and Fermi Level Pinning in GaInNAs-GaAs Quantum-Well Laser Diodes
Metadata only
Datum
2010Typ
- Journal Article
ETH Bibliographie
yes
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Publikationsstatus
publishedExterne Links
Zeitschrift / Serie
IEEE Journal of Quantum ElectronicsBand
Seiten / Artikelnummer
Verlag
IEEEThema
Current spreading efficiency; dilute nitrides; Fermi level pinning; GaInNAs; quantum-well laser diodesAnmerkungen
Manuscript received December 08 2009, Revised January 26 2010, Current version published March 31 2010.ETH Bibliographie
yes
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