Depth-profiling analysis of MOCVD-grown triple junction solar cells by SIMS
dc.contributor.author
Téllez, Helena
dc.contributor.author
Vadillo, Jose M.
dc.contributor.author
Rodriguez Messmer, Egbert
dc.contributor.author
Miguel-Sánchez, Javier
dc.contributor.author
Javier Laserna, J.
dc.date.accessioned
2017-06-09T09:51:43Z
dc.date.available
2017-06-09T09:51:43Z
dc.date.issued
2011-01
dc.identifier.issn
0142-2421
dc.identifier.issn
1096-9918
dc.identifier.other
10.1002/sia.3517
dc.identifier.uri
http://hdl.handle.net/20.500.11850/31411
dc.language.iso
en
dc.publisher
Wiley
dc.subject
Dynamic SIMS
dc.subject
Quadrupole SIMS
dc.subject
Triple junction solar cells
dc.subject
Photovoltaic devices
dc.subject
In-depth analysis
dc.subject
III-V semiconductors
dc.subject
Concentration photovoltaics
dc.title
Depth-profiling analysis of MOCVD-grown triple junction solar cells by SIMS
dc.type
Conference Paper
ethz.journal.title
Surface and Interface Analysis
ethz.journal.volume
43
ethz.journal.issue
1-2
ethz.journal.abbreviated
Surf. Interface Anal.
ethz.pages.start
646
ethz.pages.end
648
ethz.event
17th International Conference on Secondary Ion Mass Spectrometry (SIMS XVII)
ethz.event.location
Toronto, Canada
ethz.event.date
September 14-18, 2009
ethz.notes
Received 30 September 2009, Revised 12 January 2010, Accepted 23 March 2010, Published online 27 May 2010.
ethz.identifier.wos
ethz.identifier.nebis
000006980
ethz.publication.place
Chichester
ethz.publication.status
published
ethz.date.deposited
2017-06-09T09:52:11Z
ethz.source
ECIT
ethz.identifier.importid
imp59364dbf16cb526303
ethz.ecitpid
pub:51818
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-12T17:28:42Z
ethz.rosetta.lastUpdated
2024-02-01T16:57:40Z
ethz.rosetta.versionExported
true
ethz.COinS
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