Different current conduction mechanisms through thin high-k HfxTiySizO films due to the varying Hf to Ti ratio
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Date
2004-05Type
- Journal Article
ETH Bibliography
yes
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Publication status
publishedExternal links
Journal / series
Journal of Applied PhysicsVolume
Pages / Article No.
Publisher
American Institute of PhysicsSubject
Hafnium compounds; Titanium compounds; Dielectric thin films; MOCVD; Permittivity; Electrical conductivity; Leakage currents; StoichiometryNotes
Received 16 December 2003, Accepted 16 February 2004.More
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ETH Bibliography
yes
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