Different current conduction mechanisms through thin high-k HfxTiySizO films due to the varying Hf to Ti ratio
- Journal Article
Journal / seriesJournal of Applied Physics
Pages / Article No.
PublisherAmerican Institute of Physics
SubjectHafnium compounds; Titanium compounds; Dielectric thin films; MOCVD; Permittivity; Electrical conductivity; Leakage currents; Stoichiometry
NotesReceived 16 December 2003, Accepted 16 February 2004.
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