Verification and Application of an Analytical Switching Loss Model for a SiC MOSFET and Schottky Diode Half-Bridge
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Date
2022Type
- Conference Paper
ETH Bibliography
yes
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Abstract
This paper investigates the accuracy of a comprehensive analytical switching loss model (benchmark model) for a SiC MOSFET and Schottky diode half-bridge over a wide operating range using devices from different manufacturers. The model on average shows an error of 8.63% for turn-on losses and 7.68% for turn-off losses. In addition, the benchmark model is applied to analyze the possible accuracy improvement by using measured device characteristics instead of data sheet information. Furthermore, commonly used assumptions/simplifications in the literature for deriving analytical switching loss models are categorized, and their impact on the accuracy of switching loss models is evaluated based on the benchmark model. Show more
Permanent link
https://doi.org/10.3929/ethz-b-000564428Publication status
publishedBook title
2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia)Pages / Article No.
Publisher
IEEEEvent
Subject
SiC MOSFET; Switching losses; Analytical model; Assumption analysisOrganisational unit
03889 - Biela, Jürgen / Biela, Jürgen
Notes
Conference lecture held on May 19, 2022.More
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ETH Bibliography
yes
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