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Closed Loop Input Current Control of a Hybrid 12-Pulse Rectifier
(2008)2008 IEEE Power Electronics Specialists ConferenceConference Paper -
Design and Control of an Active Reset Circuit for Pulse Transformers
(2008)2008 IEEE International Power Modulators and High-Voltage ConferenceIn pulse modulators applying pulse transformers reset circuits are used to achieve optimal utilization of the core material, which results in lower costs, downsized pulse transformer/system volume and therefore in an improved pulse behavior due to the smaller parasitics. Because of its simplicity the most common method to reset the core is a dc reset circuit, where a dc current is used to premagnetize the core. However, the dc reset circuit ...Conference Paper -
Solid State Modulator for Plasma Channel Drilling
(2008)2008 IEEE International Power Modulators and High-Voltage ConferenceIn addition to conventional mechanical and explosive drilling and demolition, drilling based on the use of pulsed electric power has been investigated intensively and recently commercial applications begin to emerge. With this method, the demolition of the rock is either performed by sonic impulses due to pulse discharges in water or by discharges directly through the rock, called plasma channel drilling (PCD). Due to the direct impact, ...Conference Paper -
High-frequency, three-phase current controller implementation in an FPGA
(2008)2008 IEEE 11th Workshop on Control and Modeling for Power ElectronicsThree phase rectifiers with switching frequencies of 500 kHz or more require high speed current controllers. At such high switching frequencies analog controllers as well as high speed DSP-systems have limited performance. In this paper, two high speed current controller implementations using two different FPGAs - one for switching frequencies up to 1 MHz and one for switching frequencies beyond 1 MHz - are presented to overcome this ...Conference Paper -
Multi-domain simulation of transient junction temperatures and resulting stress-strain behavior of power switches for long-term mission profiles
(2008)2008 IEEE 11th Workshop on Control and Modeling for Power ElectronicsFor lifetime estimation of power converters in traction applications, one method is to calculate numerically the stress-strain hysteresis curves of the interfaces silicon-solder-DCB and/or DCB-solder-baseplate inside the power modules. This can only be achieved if the transient junction temperatures in these layers are known for a defined mission-profile. Therefore, one has to couple circuit simulation with thermal simulation and stress-strain ...Conference Paper -
Model Based Optimization of EMC Input Filters
(2008)2008 IEEE 11th Workshop on Control and Modeling for Power ElectronicsInput filters of power converters for compliance with regulatory electromagnetic compatibility (EMC) standards are often over-dimensioned in practice due to a non-optimal selection of number of filter stages and/or the lack of solid volumetric models of the inductor cores. This paper presents a systematic filter design approach based on a specific filter attenuation requirement and volumetric component parameters. It is shown that a minimal ...Conference Paper -
Accurate Small-Signal Model for an Automotive Bidirectional Dual Active Bridge Converter
(2008)2008 IEEE 11th Workshop on Control and Modeling for Power ElectronicsThe derivation of an accurate small-signal model for a galvanically isolated, bidirectional DC-DC converter and the implementation of a corresponding controller on a digital signal processor (DSP) as well as key methods and functions required for the digital implementation are detailed in this paper. The investigated DC-DC converter, an automotive Dual Active Bridge (DAB) system enables power transfer between a low voltage port (ranging ...Conference Paper -
5kV/200ns Pulsed Power Switch based on a SiC-JFET Super Cascode
(2008)Proceedings of the 2008 IEEE International Power Modulators and High-Voltage ConferenceIn many pulse power applications there is a trend to modulators based on semiconductor technology. For these modulators high voltage and high current semiconductor switches are required in order to achieve a high pulsed power. Therefore, often high power IGBT modules or IGCT devices are used. Since these devices are based on bipolar technology the switching speed is limited and the switching losses are higher. In contrast to bipolar devices ...Conference Paper -
Double-Stage Gate Drive Circuit for Parallel Connected IGBT Modules
(2008)Proceedings of the 2008 IEEE International Power Modulators and High-Voltage ConferenceIn more and more pulsed power applications solid state modulators are applied. There, often IGBT modules must be connected in parallel due to their limited power handling capability. For balancing the currents in the IGBTs a control method adapting the gate signal of the single IGBTs has been presented in a previous paper. Besides the current balancing also the fall and rise times of the voltages/currents are crucial as they significantly ...Conference Paper -
Mesoscale Electric Power Generation From Pressurized Gas Flow
(2008)Journal of Micromechanics and Microengineering ~ Invited papers from the 7th international workshop on micro and nanotechnology for power generation and energy conversion applications (PowerMEMS 2007)Conference Paper