Fast and Accurate Data Sheet based Analytical Turn-on Switching Loss Model for a SiC MOSFET and Schottky Diode Half-Bridge
Open access
Date
2023Type
- Conference Paper
ETH Bibliography
yes
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Abstract
This paper proposes a novel data sheet based, fully analytical turn-on switching loss model for a SiC MOSFET and Schottky diode half-bridge including parasitics. The proposed model shows similar accuracy (error around 28%) compared to analytical switching loss models without closed-form analytical equations in the literature, while reducing the computational effort by more than 20 times. In addition, the proposed model shows the best accuracy (error around 12.4%) compared to other fully analytical switching loss models in the literature, which is verified by using measured device characteristics instead of data sheet information. The accuracy of the proposed model is comprehensively verified by double pulse tests using 5 different SiC MOSFET (with different structures) and Schottky diode pairs from different manufacturers. Show more
Permanent link
https://doi.org/10.3929/ethz-b-000635625Publication status
publishedExternal links
Book title
2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)Pages / Article No.
Publisher
IEEEEvent
Subject
Wide bandgap devices; SiC MOSFET; Switching losses; Analytical modelOrganisational unit
03889 - Biela, Jürgen / Biela, Jürgen
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ETH Bibliography
yes
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