Optical absorption in silicon layers in the presence of charge inversion/accumulation or ion implantation
dc.contributor.author
Alloatti, Luca
dc.contributor.author
Lauermann, Matthias
dc.contributor.author
Sürgers, Christoph
dc.contributor.author
Koos, Christian
dc.contributor.author
Freude, Wolfgang
dc.contributor.author
Leuthold, Juerg
dc.date.accessioned
2020-07-10T08:03:04Z
dc.date.available
2017-06-10T21:27:07Z
dc.date.available
2020-07-10T08:03:04Z
dc.date.issued
2013-07-29
dc.identifier.issn
0003-6951
dc.identifier.issn
1077-3118
dc.identifier.other
10.1063/1.4817255
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/71826
dc.identifier.doi
10.3929/ethz-b-000071826
dc.description.abstract
We determine the optical losses in gate-induced charge accumulation/ inversion layers at a Si/SiO2 interface. Comparison between gate-induced charge layers and ion-implanted thin silicon films having an identical sheet resistance shows that optical losses can be significantly lower for gate-induced layers. For a given sheet resistance, holes produce higher optical loss than electrons. Measurements have been performed at λ = 1550 nm.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
American Institute of Physics
en_US
dc.rights.uri
http://creativecommons.org/licenses/by/3.0/
dc.title
Optical absorption in silicon layers in the presence of charge inversion/accumulation or ion implantation
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution 3.0 Unported
dc.date.published
2013-07-30
ethz.journal.title
Applied Physics Letters
ethz.journal.volume
103
en_US
ethz.journal.issue
5
en_US
ethz.journal.abbreviated
Appl. Phys. Lett.
ethz.pages.start
051104
en_US
ethz.size
5 p.
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.identifier.wos
ethz.publication.place
Melville, NY
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02635 - Institut für Elektromagnetische Felder / Electromagnetic Fields Laboratory::03974 - Leuthold, Juerg / Leuthold, Juerg
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02635 - Institut für Elektromagnetische Felder / Electromagnetic Fields Laboratory::03974 - Leuthold, Juerg / Leuthold, Juerg
ethz.date.deposited
2017-06-10T21:30:18Z
ethz.source
ECIT
ethz.identifier.importid
imp593650ffbeaf528404
ethz.ecitpid
pub:113853
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2017-07-15T02:34:36Z
ethz.rosetta.lastUpdated
2024-02-02T11:23:54Z
ethz.rosetta.versionExported
true
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